hl6327/28mg low operating current visible laser diode ade-208-782a (z) 2nd edition jul. 1999 description the hl6327/28mg are 0.63 m m band algainp laser diodes with a multi-quantum well (mqw) structure. they are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. application ? laser leveler ? laser scanner ? measurement features ? visible light output: 635 nm typ (nearly equal to he-ne gas laser) ? optical output power: 5 mw cw ? low operating current: 40 ma typ ? low operating voltage: 2.4 v max ? operating temperature: +50 c ? tm mode oscillation ld pd 1 3 2 internal circuit HL6327MG internal circuit hl6328mg package type hl6327/28mg: mg ld 3 2 pd 1
hl6327/28mg 2 absolute maximum ratings (t c = 25 c) optical and electrical characteristics (t c = 25 c) item symbol value unit optical output power p o 5mw ld reverse voltage v r(ld) 2v pd reverse voltage v r(pd) 30 v operating temperature topr C10 to +50 c storage temperature tstg C40 to +85 c item symbol min typ max unit test condition optical output power p o 5 mwkink free threshold current ith 30 50 ma operating current i op 4060ma p o = 5 mw operating voltage v op 2.22.4v p o = 5 mw slope efficiency hs 0.3 0.5 0.8 mw/ma 3(mw) / (i (4mw) C i (1mw) ) lasing wavelength l p 630 635 640 nm p o = 5 mw beam divergence parallel to the junction q //6811deg.p o = 5 mw beam divergence parpendicular to the junction q ^ 253137deg.p o = 5 mw monitor current i s 0.02 0.07 0.12 ma p o = 5 mw, v r(pd) = 5v
hl6327/28mg 3 typical characteristic curves slope effciency vs. case temperature case temperature, t c ( c) case temperature, t c ( c) - 10 0 50 40 30 20 10 - 10 0 50 40 30 20 10 slope efficiency, h s (mw/ma) 0 0.2 0.4 0.6 0.8 1.0 optical output power, p o (mw) 6 5 4 3 2 1 0 080 70 forward current, i f (ma) optical output power vs. forward current optical output power, p o (mw) monitor current, i s (ma) 0.12 0.10 0.08 0.06 0.04 0.02 0 4 2 13 5 0 monitor current vs. optical output power 100 50 10 threshold current, ith (ma) threshold current vs. case temperature 20 60 30 10 20 40 50 t c = - 10 c v r(pd) = 5 v t c = 25 c 25 c 40 c 50 c
hl6327/28mg 4 lasing spectrum wavelength, l p (nm) 630 635 640 645 650 relative intensity optical output power, p o (mw) 03 2 1 45 polarization ratio 0 100 200 300 400 monitor current vs. case temperature - 10 0 10 20 30 40 monitor current, i s (ma) 0 0.05 0.10 0.15 0.20 50 500 case temperature, t c ( c) lasing wavelength vs. case temperature polarization ratio vs. optical output power lasing wavelength, l p (nm) 630 635 645 650 640 - 10 0 10 20 30 40 50 case temperature, t c ( c) p o = 5 mw p o = 3 mw p o = 1 mw t c = 25 c p o = 5 mw v r = 5 v p o = 5 mw t c = 25 c na = 0.4
hl6327/28mg 5 4 3 2 1 0 01 3 2 45 astigmatism, a s ( m m) astigmatism vs. optical output power 5 0.2 0.4 0.6 0.8 1.0 - 40 - 30 - 20 - 10 040 30 20 10 angle, q (deg.) relative intensity 0 far field pattern optical output power p o (mw) p o = 5 mw t c = 25 c t c = 25 c na = 0.4 parallel 100 80 60 40 20 0 survival rate (%) applied voltage (kv) electrostatic destruction (reverse) 023 1 0.5 1.5 2.5 reverse (c : 100 pf, r : 1.5 k w ) n = 10 pcs judgment : d i o 10% perpendicular forward (c : 100 pf, r : 1.5 k w ) n = 10 pcs judgment : d i o 10% 0 400 200 600 100 80 60 survival rate (%) 40 20 0 applied voltage (v) electrostatic destruction (forward)
hl6327/28mg 6 package dimensions hitachi code jedec eiaj weight (reference value) ld/mg 0.3 g unit: mm 1 2 3 5.6 +0 ?.025 f 1.0 0.1 (0.4) (90 ) 1.6 0.2 f 0.4 +0.1 ? f f 4.1 0.3 3.55 0.1 0.25 glass 1.27 f 3 ? 0.45 0.1 6.5 1.0 1.2 0.1 2.3 0.2 f 1 2 3 2.0 0.2 emitting point
hl6327/28mg 7 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachis or any third partys patent, copy- right, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have re- ceived the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, con- tact hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or fail- ure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equip- ment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachis sales office for any questions regarding this document or hitachi semiconductor prod- ucts. 1. the laser light is harmful to human body especially to eye no matter what directly or indirectly. the laser beam shall be observed or adjusted through infrared camera or equivalent. hitachi, ltd. semiconductor & ic div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 1999. all rights reserved. printed in japan . hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 049318 tel: 535-2100 fax: 535-1533 url northamerica : http:semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia (singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm asia (taiwan) : http://www.hitachi.com.tw/e/product/sicd_frame.htm asia (hongkong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. taipei branch office 3f, hung kuo building. no.167, tun-hwa north road, taipei (105) tel: <886> (2) 2718-3666 fax: <886> (2) 2718-8180 hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road, tsim sha ts u kowloon, hong kong tel: <852> (2) 735 9218 fax: <852> (2) 730 0281 telex: 40815 hitec hx hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 778322 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to:
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